Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates
نویسندگان
چکیده
منابع مشابه
Room-temperature continuous-wave 1.55 lm GaInNAsSb laser on GaAs
Introduction: The proposal by Kondow and co-workers [1] of GaInNAs active regions for temperature insensitive GaAs-based lasers has led to significant success in the 1.3 mm regime, and performance currently exceeds that of competing InP-based devices. This effort has yielded InGaAs=GaAs lasers that emit out to 1.25 mm with exceedingly lowthreshold current densities [2], and emission has been ex...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2018
ISSN: 1094-4087
DOI: 10.1364/oe.26.013985